Abstract
The effect of hydrogen plasma etching (HPE) of a Si substrate on the morphology and the quality of the diamond films deposited by DC plasma chemical vapor deposition in CH4-H2 mixture gas have been studied. It has been found that the HPE treatment before diamond deposition results in the modification of the substrate surface through the removal of the Si oxide layer and the formation of an uneven surface, and enhances the nucleation and growth of diamond. The amorphous component contained within the deposited films decreases through the use of the etched substrate, especially when the CH4 concentration is higher than 3%.
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