Abstract
ABSTRACTExposure of GaAs and AlGaAs to a hydrogen plasma has been shown to result in a significant change in the electrical and optical properties. The changes are related to the electrical deactivation of the deep and shallow impurities by hydrogenation. Spectroscopic and electrical measurements have shown that Si donors and C acceptors in high purity GaAs can be passivated by hydrogenation. Hydrogenation of p-type GaAs and AlGaAs has resulted in highly resistive material. SiO2 was found to be a suitable mask for the hydrogenation process. Single and multiple stripe geometry lasers have been fabricated by properly masking the laser structure. The lasers produced using the hydrogenation process have low threshold currents and are capable of cw room temperature operation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
