Hydrogenation of boron in silicon during low temperature gas and liquid phase processing

Abstract

Capacitance-voltage profiling of the spatial variation of the space-charge density near the silicon surface demonstrates the passivation of the boron acceptor at low temperature (90–100 °C) by chemical polishing, water, and forming gas conditions employed in the semiconductor process environment. The depth profile of the hydrogenated boron acceptor following low temperature forming gas anneals is consistent with trap-limited hydrogen transport proposed by Herrero. A hydrogen diffusion coefficient of 8.75×10−13 cm2/s is obtained on 1.2×1015 boron/cm3 p-type silicon at 100 °C.