Abstract
Microelectromechanical (MEMS) structures consisting of surface micromachined disk resonators of phosphorous- doped hydrogenated amorphous silicon (n-a-Si:H) deposited by radiofrequency plasma enhanced chemical vapour deposition (RF-PECVD) were fabricated and characterized. Quality factors up to 104 in vacuum were measured for disk resonators operating at frequencies between 0.1 and 10MHz. The metallized structures were actuated with electrostatic force by radially placed electrodes. Finite element simulations were used to identify the type of vibrational modes present and show good agreement with measured values. Resonator geometry and ambient pressure were varied to attain a generalized understanding of the RF performance. Higher harmonic modes show increasing quality factors which bears great potential when designing sensors for operation in dissipative media.
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