Hydrogenated amorphous silicon nanowire transistors with Schottky barrier source/drain junctions

Abstract

Hydrogenated amorphous silicon nanowire field-effect transistors (a-Si:H NWFETs) with Schottky source/drain junctions have been fabricated with a simple process involving maximum temperatures of 250 °C. Electrical characteristics of devices with various numbers of wires and different linewidths are analyzed. The NWFETs with small effective channel width demonstrate improved subthreshold slope and field-effect mobility as compared to wider devices. Additionally, the on-current scales linearly with effective channel width. Possible explanations for these effects are discussed, and applications of a-Si:H NWFETs are presented.