Abstract
The present work is aimed at investigating hydrogen transport through amorphous WO3 (a-WO3) and crystalline WO3 (c-WO3) films prepared by rf-magnetron sputtering onto indium tin oxide(ITO) glass under impermeable boundary condition in 0.1 M H2SO4 solution by using Fourier transform infra-red(FTIR) spectroscopy, cyclic voltammetry, potentiostatic current transient technique and ac-impedance technique. The FTIR spectra showed that the a-WO3 film contained water, apart from the c-WO3. From the results obtained form the electrochemical experiments, it was suggested that the different behaviours in cyclic voltammograms between a- and c-WO3 films result from an open-structured nature of a-WO3 film containing H2O, which does not exist in the c-WO3 film and there are three kinds of hydrogen injection sites in the films, i.e., reversibly active site, shallow trap site(reversible trap site) and deep trap site(irreversible trap site). The Mott-Schottky approach permitted us to semi-quantitatively determine the amount of the deep trap site.
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