Abstract
We have investigated the hydrogen storage ability and the effect of hydrogenation on structure and physical properties of Ti/V and their oxides-based thin films. A series of Ti–TiO2 and VOx–TiO2 thin films with different layer structures, geometries and thicknesses have been prepared by the sputtering technique on different (Si(111), SiO2, C) substrates. For the Ti–TiO2–Ti films up to 50 at.% of hydrogen can be stored in the Ti layers, while the hydrogen can penetrate without accumulation through the TiO2 layer. A large hydrogen storage was also found in some V2O5–TiO2 films. Hydrogen could also remove the preferential orientation in the Ti films and induce a transition of V2O5 to VO2 in the films.
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