Abstract
ABSTRACTIn order to achieve a better understanding of hydrogen segregation to interfaces, a combination of techniques is being used in which hydrogen is deliberately introduced into planar interfaces between thin films, then the segregation measured using highenergy ion-beam profiling techniques. Results are given for heterophase interfaces produced by epitaxial deposition on silicon: The AI/Si (111) and CoSi2/Si (001) interfaces. A preliminary study of Au tilt boundaries in thin-film bicrystals shows the presence of a large amount of hydrogen, ∼1016 atoms/cm2, in the boundary after plasma hydrogenation, but also the presence of C impurity (∼ 1.6 × 1015 atoms/cm2 ) and Ag. We conclude that some of the hydrogen in the boundary may have been chemically bound to the carbon.
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