Hydrogen-Related Donor Formation: Fabrication Techniques, Characterization, and Application to High-voltage Superjunction Transistors

Abstract

Hydrogen-induced doping can be used to create n-doped layers and columns in semiconductor devices. We investigated two techniques to form n-type layers and columns: Proton implantation followed by an annealing step in an inert atmosphere, and helium implantation followed by a hydrogen- plasma treatment. Spreading-resistance measurements and capacitance-voltage measurements were applied to analyze the doping distribution along the implantation direction. Scanning capacitance microscopy and light microscope images after selective etching were used for two-dimensional dopant profiling. Finally, we showed that hydrogen-related donor formation can be successfully applied to create high-voltage superjunction transistors.