Hydrogen profiles of thin PVD silicon nitride films using elastic recoil detection analysis

Abstract

Thin silicon nitride films (e.g. D = 100 nm) produced by the ion beam sputtering technique show different depth profiles of hydrogen concentration depending on process parameters. The hydrogen profiles of these thin films can be varied within certain limits by annealing. Films prepared on a silicon substrate have been analysed with respect to the hydrogen content by the elastic recoil detection analysis method (ERDA) using a 10 MeV 20Ne beam impinging on the target at an incident angle of φ = 10° relative to the ion beam axis. Comparison of the results of the ERDA with the results from analyses using the nuclear reaction 1H(15N, αγ)12C shows good agreement. The experimental results illustrate the advantage of the PVD sputtering deposition technique in controlling the hydrogen concentration of thin silicon nitride films.