Abstract
Graphitic carbon nitride (g-C3N4) is an emerging non oxide wide band gap semiconductor which has been investigated for hydrogen production through photoelectrochemical (PEC) water splitting. In this study, g-C3N4 nanoflakes film was fabricated by the thermal pyrolysis process and its PEC water splitting performance was investigated. The nanoflakes morphology and graphitic phase of C3N4 with an average crystallite size of 8.49 nm were confirmed with FESEM and XRD analysis respectively. A UV–visible spectrophotometer was used to estimate the band gap of the fabricated photoanode film (2.7 eV). Furthermore, the fabricated g-C3N4 film has shown a significant photocurrent density of 0.87 µA/cm2 under UV light illumination.
Published Version
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