Abstract

Abstract Films of polycrystalline Bi 2 S 3 have been prepared onto bismuth and platinum substrates by electrodeposition from an aqueous sulfide bath. The films were thin, uniform and well adhered. Bi 2 S 3 is a direct band gap semiconductor with a value of 1.28 eV optimally matched with the solar spectrum. The photoelectrochemical study was undertaken for the generation of hydrogen by using illuminated n -Bi 2 S 3 particles; it was found that hydrogen evolution depends highly on the synthesis method of powder. Impregnation of platinum onto Bi 2 S 3 shows a production enhancement of about 25%. The most active photocatalyst, prepared by a solvent thermal process and loaded with Pt in 0.1 M S 2− alkaline electrolyte, yields 2.13×10 −2 ml mg −1 of H 2 after 4 h of irradiation with the visible output of a 500 W halogen lamp.

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