Abstract
AbstractIn LEC‐grown GaP doped with silicon, two vibrational absorption lines are measured at 2175.1 and 2190.3 cm–1 (T = 7 K). These lines are due to H stretching modes where hydrogen passivates SiGa donors. Uniaxial stress experiments show that the SiGa complex responsible for the 2175.1 cm–1 line has trigonal symmetry and is the isolated passivated SiGa. The complex creating the 2190.3 cm–1 line has the symmetry Cs and contains additionally a BGa with the four constituents located in an {110} mirror plane. Therefore, also the structure of the group‐IV donohydrogen complexes is in GaP different from that observed in GaAs.
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