Abstract
The effect of hydrogen on donors (N) and acceptors (Al, B) in 6H-SiC crystals has been evidenced by electron spin resonance and transport measurements. Typical passivation (i.e., complexing with H) levels of 75% have been obtained by annealing in a H2 atmosphere, and a corresponding decrease in free-carrier density has been observed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
