Hydrogen ion diffusion coefficient of silicon nitride thin films

Abstract

Hydrogen ion diffusion in silicon nitride thin film is of significant interest because of its importance in barrier, sensor and catalytic coating applications. In this study, a novel method based on potential–pH response measurement was used to determine hydrogen ion diffusion in silicon nitride thin films. Hydrogen ion diffusion coefficient in silicon nitride films obtained from this method was 1×10 −19 cm 2/s. A potential–pH response drift was observed and is believed to be due to the presence of a hydrated layer affecting the hydrogen ion diffusion onto the nitride film of the Si 3N 4-gate hydrogen ion-sensitive field effect transistors (ISFETs). The unique feature of the potential–pH response method is its relatively simple experimental procedure, which eliminates complications arising from surface-related effects and/or presence of hydrogen traps in membrane, such as those found in the conventional permeation method. The method also offers a considerable test time reduction, with the experiment being completed in 10 h as compared to the conventional electrochemical permeation method which takes as long as 5 days.