Hydrogen diffusion coefficient of silicon nitride thin films

Abstract

Hydrogen concentration and diffusion in silicon nitride thin film is of significant interest because of its importance in barrier, sensor and catalytic coating applications. In this study, a novel method based on potential–pH response measurement was used to determine hydrogen diffusion in silicon nitride thin films. Hydrogen diffusion coefficient of silicon nitride films obtained from this method was 1×10 −19 cm 2/s. The unique feature of the potential–pH response method is its relatively simple experimental procedure, which eliminates complications arising from surface related effects and/or presence of hydrogen traps in the metal. The method also offers a considerable reduction in test time.