Hydrogen effects in dilute III-N-V alloys: From defect engineering to nanostructuring

Abstract

The variation of the band gap energy of III-N-V semiconductors induced by hydrogen incorporation is the most striking effect that H produces in these materials. A special emphasis is given here to the combination of N-activity passivation by hydrogen with H diffusion kinetics in dilute nitrides. Secondary ion mass spectrometry shows an extremely steep (smaller than 5 nm/decade) forefront of the H diffusion profile in Ga(AsN) under appropriate hydrogenation conditions. This discovery prompts the opportunity for an in-plane nanostructuring of hydrogen incorporation and, hence, for a modulation of the material band gap energy at the nanoscale. The properties of quantum dots fabricated by a lithographically defined hydrogenation are presented, showing the zero-dimensional character of these novel nanostructures. Applicative prospects of this nanofabrication method are finally outlined.