Hydrogen Dilution Influence on the SiC Films Preparation and Structural Properties as the Window Layer of p-i-n Solar Cell

Abstract

The SiC thin films as the window layer of p-i-n solar cell was prepared by PECVD technology in this article,investigated the influence of hydrogen dilution on the structure and optical properties of SiC thin films,found the optimal growth craft under the same conditions. The results showed that the optical band-gap of the window layer achieved the widest 2.2ev when hydrogen dilution rate was 6.25, furthermore, got inerratic surface morphology with deposition rate up to 0.1nm / s.