Abstract
Hydrogen adsorbed at room temperature on tantalum, platinum, and silicon surfaces was analyzed by means of reflexion Energy Loss Spectroscopy (ELS). When a molecular hydrogen pressure higher than 10 −4Torr was introduced in the apparatus, an ELS peak located at 13 eV below the elastic peak appeared on all samples. This peak was attributed to the excitation of the molecular hydrogen bond. Furthermore, on silicon, a second peak corresponding to the adsorption of atomic hydrogen was observed. This technique could be applied to the detection of hydrogen trapped in the wall of nuclear fusion devices.
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