Abstract
II–VI materials are important for optoelectronic devices. These devices are currently wet etched and due to the isotropic nature of wet etching, their etch geometries are limited. Reactive ion etching (RIE), a dry etch process, is a more desirable alternative, because it offers a means of producing small anisotropic structures. This study describes the use of a novel hydrogen based RIE chemistry that is shown to clearly etch anisotropic features in ZnS. Etch characteristics as a function of pressure, power, and temperature are presented for both patterned and unpatterned material. Three different types of ZnS films are studied: evaporated, metalorganic chemical vapor deposited (MOCVD), and sputtered. Among the three types of ZnS films investigated, evaporated, and MOCVD consistently etched faster than sputtered ZnS films under the same conditions. However, when patterned, all three ZnS films exhibited similar etch rates.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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