Abstract
Hydrogen and deuterium plasma treatments were performed on the front side of p-type semi-crystalline silicon wafers with and without emitter, and of solar cells. These treatments were performed at temperatures around 150{sup o}C and 250{sup o}C for 15 to 90 minutes. Chemical depth profiling of deuterium and electrical profiling of hydrogen and deuterium were carried out using SIMS and the C-V profiling technique. To correlate the concentration of hydrogen and deuterium to the effect of passivation, this concentration, the minority carrier diffusion length and changes in the cell parameters are compared. 2 figs., 3 tabs., 8 refs.
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