Improved backside hydrogenation on semicrystalline silicon solar cells by RF plasma

Abstract

The results obtained from the optimization of the backside hydrogenation on semicrystalline silicon solar cells by RF plasma process are described. Process variables were the hydrogen pressure and the treatment time. Solar cells, photocurrent, and photovoltage, were increased after treatment without generating front side defects, which reduce the fill factor, and consequently the conversion efficiency was improved. The experiments show that backside hydrogenation for semicrystalline silicon solar cells is very effective. The short-circuit current density shows relative increases of over 40% for cells with initial photocurrent values smaller than 18 mA/cm/sup 2/ after the hydrogen treatment. For solar cells fabricated on solar grade substrates, photocurrent values increased even more, reaching +95%. >