Abstract
We have investigated the dependence of impurity incorporation of GaInNAs on the In concentration, substrate orientation, and growth temperature by secondary ion mass spectroscopy (SIMS). GaInNAs films were grown by low-pressure metalorganic vapor-phase epitaxy (MOVPE) on GaAs substrates. It was found that H and C concentrations were strongly related to the N concentration in the solid and the dimethylhydrazine (DMHy) flux at the surface. Furthermore, intentional Si-doping study revealed that incorporated H was stable, which is most likely a consequence of neutral bonding N, although the activation energy of H was as large as 197 kcal/mol derived from the observed growth-temperature dependence.
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