Abstract
SiCOH films containing hydrocarbon porogens were prepared using a plasma enhanced chemical vapor deposition system. Their chemical and electrical properties were characterized with various hydrocarbon incorporations. The hydrocarbon incorporation of SiCOH films was estimated using Fourier transform infrared absorption spectra by calculating the peak ratio of hydrocarbon related peaks and Si–O peaks. Thereafter, changes seen in current–voltage (I–V) curves were explained by defect states in the interface of films related with the variation of hydrocarbon incorporation by deposition and/or by postdeposition annealing.
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