Abstract
We report the photovoltaic performance of a diode based on a p-type tungsten diselenide (WSe2) active region. The device is formed by WSe2 and cadmium sulfide (CdS) layers, both obtained via chemical bath deposition. A novel hydrazine-free chemical formulation allows deposition of WSe2 on glass and flexible Hastelloy substrates. Characterization of WSe2 via Raman spectroscopy shows four bands at 189, 244, 293, and 588 cm−1. The strongest band at 293 cm−1 is assigned to the interlayer interaction mode of the WSe2 layers. The photoluminescent characterization of Hastelloy/CdS/WSe2 samples exhibits two excitonic transitions at 1.7860 and 1.7899 eV. The current density-voltage (J-V) measurements of the CdS/WSe2 structure show a photovoltaic response with VOC = 180 mV, JSC = 0.07 mA cm−2, and FF = 0.22.
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