Hybridization-induced electron self-trapping in soft local structures in non-metallic solids

Abstract

A new type of electron self-trapping is described, which can occur even if the bare single-electron energy level is independent of the surrounding local atomic configuration coordinates. Such a self-trapping can be realized in soft local structures in non-metallic solids, e.g., semiconductors. Hybridization of states in the interband gap is decisive for the self-trapping, providing actually the related coupling between an electron (hole) and a localized soft motion mode in the surrounding atomic configuration. In this sense, unlike the well-known polaronic self-trapping, the self-trapping under discussion is entirely of quantum mechanical origin.