Abstract
Of all oxides, lithium niobate (LiNbO3) is the gold standard electro-optical material in fiber-optic transmission systems. Modulators based on diffused waveguides in bulk LiNbO3 substrates are, however, relatively large. In contrast, ring modulators based on silicon-on-insulator are of interest for chip-scale electro-optical modulation, but unstrained crystalline silicon does not exhibit a linear electro-optic effect, so modulation is based on alternative mechanisms such as the plasma dispersion effect. Here, we present a hybrid silicon and LiNbO3 electro-optical ring modulator operating at gigahertz frequencies. The modulator consists of a 15 μm radius silicon microring and an ion-sliced LiNbO3 thin film bonded together via benzocyclobutene. Fabricated devices operating in the TE optical mode exhibit an optical loaded quality factor of 14,000 and a resonance tuning of 3.3 pm/V. The small-signal electrical-to-optical 3 dB bandwidth is measured to be 5 GHz. Digital modulation with an extinction ratio greater than 3 dB is demonstrated up to 9 Gb/s. High-speed and low-tuning-power chip-scale modulators that exploit the high-index contrast of silicon with the second-order susceptibility of LiNbO3 are envisioned.
Published Version
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