Abstract
Bi2Se3 thin films were grown on c-plane sapphire substrates by hybrid physical-chemical vapor deposition (HPCVD) using trimethyl bismuth (TMBi) and Se pellets. A Se-rich environment is created by evaporating Se pellets in the vicinity of the substrate, which is used to suppress the formation of Se vacancies. The effects of pre-cracking temperature and substrate/Se temperature on the growth rate, structural and electrical properties of the Bi2Se3 films were investigated. C-axis oriented films were obtained which show a reduction in the carrier concentration as pre-cracking temperature was increased from 290°C (1.6×1019cm−3) to 350°C (8.4×1018cm−3). An additional reduction in carrier concentration (7.28×1018cm−3) was observed on increasing the substrate temperature from 200 to 260°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
