Abstract
A hybrid organic-inorganic diode has been fabricated by hot-wire chemical vapor deposition of low process temperature (<140 °C) hydrogenated amorphous silicon (a-Si:H) onto a spin-coated layer of poly(N-vinylcarbazole) (PVK). The hybrid device was found to be a photoconductive diode with a high photosensitivity of near 700, a high photogain of over 100, and a response time of 500 μs. The high photosensitivity of the a-Si:H intrinsic layer and the large barrier for carrier injection at the PVK/a-Si:H interface are responsible for the good performance.
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