Abstract
The heterogeneous integration of silicon thin film and lithium niobate (LN) thin film combines both the advantages of the excellent electronics properties and mature micro-processing technology of Si and the excellent optical properties of LN, comprising a potentially promising material platform for photonic integrated circuits. Based on ion-implantation and wafer-bonding technologies, a 3 inch wafer-scale hybrid mono-crystalline Si/LN thin film was fabricated. A high-resolution transmission electron microscope was used to investigate the crystal-lattice arrangement of each layer and the interfaces. Only the H-atom-concentration distribution was investigated using secondary-ion mass spectroscopy. High-resolution X-ray-diffraction ω–2θ scanning was used to study the lattice properties of the Si/LN thin films. Raman measurements were performed to investigate the bulk Si and the Si thin films. Si strip-loaded straight waveguides were fabricated, and the optical propagation loss of a 5-µm-width waveguide was 6 dB/cm for the quasi-TE mode at 1550 nm. The characterization results provide useful information regarding this hybrid material.
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