Hybrid integration of modified uni-traveling carrier photodiodes on a multi-layer silicon nitride platform using total reflection mirrors.

Yang Shen,S J Ben Yoo,Jizhao Zang,Guangyao Liu,Siwei Li,Weicheng Lai,Kuanping Shang,Tiehui Su,Shaoqi Feng,Xiaojun Xie,Joe C Campbell

doi:10.1364/oe.25.009521

Yang Shen, S J Ben Yoo + Show 9 more

Open Access

https://doi.org/10.1364/oe.25.009521

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Abstract

We demonstrate hybrid integration of modified uni-traveling carrier photodiodes on a multi-layer silicon nitride platform using total reflection mirrors etched by focused ion beam. The hybrid photodetectors show external responsivity of 0.15 A/W and bandwidth of 3.5 GHz for devices with a diameter of 80 µm. The insertion loss of the waveguide is 3 dB and the coupling efficiency of the total reflection mirror is -3 dB. The highest RF output power is -0.5 dBm measured at 3 GHz with 9 mA photocurrent and -9 V bias.

Highlights

The levels of photonic integration have advanced at a rapid rate in the last decade
We demonstrate hybrid integration of modified uni-traveling carrier photodiodes on a multi-layer silicon nitride platform using total reflection mirrors etched by focused ion beam
The bandwidth can be improved up to 55 GHz by using a < 20 μm diameter photodetector flip-chip bonded with higher accuracy (3σ < 2 μm) alignment

Summary

Introduction

Silicon-onInsulator (SOI) is currently the mainstream and predominantly used material platform for silicon photonic integrated circuits (PICs) [1,2,3,4]. The SOI technology platform has the advantage of high index contrast and low loss while maintaining its compatibility with the existing CMOS infrastructure. The Si3N4 platform extends the lower limit of the transparency window from 1.1 μm to the visible wavelength range of 0.4 μm. It has the advantages of low loss transmission and high index contrast, which can be can be utilized to realize novel devices with superior performance [5,6,7]

Methods

Conclusion