Abstract
A hybrid III-V/SOI resonant-cavity-enhanced photodetector (RCE-PD) structure comprising a high-contrast grating (HCG) reflector, a hybrid grating (HG) reflector, and an air cavity between them, has been proposed and investigated. In the proposed structure, a light absorbing material is integrated as part of the HG reflector, enabling a very compact vertical cavity. Numerical investigations show that a quantum efficiency close to 100 % and a detection linewidth of about 1 nm can be achieved, which are desirable for wavelength division multiplexing applications. Based on these results, a hybrid RCE-PD sample has been fabricated by heterogeneously integrating an InP-based material onto a silicon-on-insulator wafer and has been characterized, which shows a clear enhancement in photo-current at the designed wavelength. This indicates that the HG reflector provides a field enhancement sufficient for RCE-PD operation. In addition, a capability of feasibly selecting the detection wavelength during fabrication as well as a possibility of realizing silicon-integrated bidirectional transceivers are discussed.
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