Abstract
Ultraviolet (UV) photodetectors with high responsivity and speed are highly desirable for imaging and remote sensing applications. Limited by the crystalline quality of a GaN-based material, which is ideal for UV photodetection, the further improvement of the performance is minimal. A hybrid graphene/unintentionally doped (UID) GaN UV photodetector with both high responsivity and high speed is reported. Holes in graphene, which are induced by the photogenerated electrons trapped at the graphene/UID GaN interface according to the capacitive effect, have a long lifetime owing to the electron-hole pair separation in space. Graphene acts as a carrier transport channel and greatly increases the charge collection efficiency under an external bias voltage. The responsivity of a hybrid graphene/UID GaN photodetector with a photosensitive area of 2 mm2 reaches 5.83 A/W at −10 V with a specific detectivity of ∼1011 Jones. The response time is ∼5 ms, which is faster than that of traditional GaN photodetectors. These results will provide a feasible route to UV detection with high performance.
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