Hybrid graphene/GaN ultraviolet photo-transistors with high responsivity and speed.

Abstract

In this work, we explore the possibility of using hybrid graphene/GaN phototransistors to get high responsivity, high speed, and large photosensitive area. The responsivity of our hybrid graphene/GaN phototransistors with a relatively large 15.2 mm2 active area reaches 361 mA/W at 10 V and the response time is ~5 ms, much better performance than traditional GaN photodetectors. This is because graphene acts as the carrier transport channel with a high mobility and greatly increases the charge collection efficiency. Our results should shed more light on the role of graphene in hybrid phototransistors and open a feasible pathway to develop large area ultraviolet photodetectors with high responsivity and high speed.