Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations

Abstract

This work examines a new hybrid edge termination structure for vertical GaN diodes. The hybrid JTE-GR termination consists of superimposed guard rings (GRs) onto a junction termination extension (JTE), resulting in zones with alternating implantation depths. The charge profile of the hybrid termination is developed by integrating the charge in the termination region across its length. An optimization strategy for designing the geometry is proposed by fitting the charge profile in the termination to that of a negative bevel edge reference termination. As the number of rings ranges from 4 to 12, it is shown via simulation that the optimized hybrid structure exhibits breakdown voltages between 92% and 95% of the ideal parallel plane breakdown voltage. Despite having similar breakdown voltages, by increasing the number of rings, the charge profile of the reference bevel termination is more closely fit. This results in a better approximation of the breakdown voltage response to variations in the p-layer doping concentration and thickness. The proposed design methodology and structure allow the design of high-voltage device termination geometry with minimal computationally expensive TCAD optimization.