Abstract
Nanoscale hut clusters formed on Ge(001) surfaces by depositing one monolayer of indium and annealing at temperatures between 350 and 500°C were studied by scanning tunnelling microscopy and synchrotron X-ray diffraction. It was found that the hut clusters form regular arrays over the entire surface. The huts are aligned with the 〈100〉 directions of the bulk Ge crystal and bounded by {103} facets. A structural model is proposed in which the clusters consist of Ge atoms and the dangling bonds on the {103} facets are saturated by In atoms which thereby stabilize the structure.
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