Effect of H 2O chemisorption on passivation of Ge(100) surface studied by scanning tunneling microscopy

Abstract

The electronic passivation of a Ge(100) surface, via the chemisorption of H 2O at room temperature (RT), and the temperature dependence of H 2O coverage were investigated using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). With a saturation H 2O dose at RT, a highly-ordered structure, due to the dissociative chemisorption of H 2O, was observed on a Ge(100) surface with a coverage of 0.85 monolayers (ML). Annealing the room temperature H 2O-dosed Ge surface to 175 °C decreased the coverage of H 2O to 0.6 ML. Further annealing at 250 °C decreased the coverage of H 2O sites to 0.15 ML, and the surface reconstruction of Ge dimers was observed over much of the surface. Annealing above 300 °C induced Ge suboxide structures, similar to the oxygen-dosed Ge surface. STS measurements confirmed that the surface dangling bond states near Fermi energy are removed by the H 2O chemisorption because the dangling bonds of Ge atoms are terminated by ―OH and ―H. The H 2O pre-dose at room temperature provides a template for the ultrathin passivation of Ge(100) surface via atomic layer deposition (ALD) at RT, since near monolayer nucleation can be obtained with a 1/2 hydroxylated and 1/2 hydrogenated Ge surface.