Abstract
Indium nitride (InN) and indium nitride compound doped oxygen element (InN:O) compounds are grown for application in sensing devices along with the function of microwave properties. The peak-to-valley current ratio (PVCR) of InN/InNO/In/SiO2/Si (III-S) p-n sensing device reached 2.6. The peak current density and peak voltage of the III-S device were as high as 3.67kA/cm2 and 2.2V, respectively. The sensing periods were 580s and 600s for the adsorption and desorption processes, respectively. The sensing sensitivities at a low RH% from 40% to 70% and at a high RH% from 70% to 90% were 8.3mΩ/RH% and 7.5mΩ/RH%, respectively. The resistive cutoff frequency of an III-S device reached 28GHz at an RH of 40%. The sensitivity of frequency measurement for an III-S device for relative humidity was 1.7kHz/RH%.
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