Abstract
We report the low temperature thermoelectric properties in the valence fluctuating system Yb3Si5 using high-quality single crystals. The coexistence of the tiny residual resistivity of 0.06 μΩ cm and the considerable Seebeck coefficient of 9 μV K−1 at 7 K leads to a huge Peltier conductivity of 40 A cm−1 K−1 and a power factor of 40 mW m−1 K−2. These pronounced characteristics are possibly attributed to the uncompensated semimetallic state in addition to the valence fluctuation of Yb ions. The large size of Yb3Si5 single crystal, which is typically ϕ 0.5–1 mm in diameter and 10 mm in length, enables the realistic application to the cryogenic thermoelectric device.
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