Abstract
Huge magnetoresistive effects were observed in a metal/insulator current-in-plane (CIP) diode feeding space charge limited (SCL) current. The insulator laterally toward opposite gold (Au) electrodes was fabricated on a SiO2 substrate by the standard photolithography method using dry etching. The insulator consisted of a SiO2∕ZnO∕SiO2∕ZnO multilayer sputtered on the substrate. Current-voltage curves showed Ohmic property and SCL current characteristics accompanied by Child-Langmuir and Mott-Gurney laws derived from first order differential calculus. Current-magnetic field curves indicated the huge magnetoresistive effects up to 1010% under the magnetic field of 0.3T at room temperature. The current-magnetic field curves have even symmetry for the applied magnetic field. The Au/insulator CIP diode is abruptly switched between a conducting state and an insulating state by the applied magnetic field.
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