Abstract
We present a concept of a rf amplifier based on a directly coupled dc SQUID with bicrystal junctions, which have high saturation power and can be used with SIS mixers or possibly for satellite and cellular phone communications. A novel input resonant circuit is proposed using single layer of HTS. Estimated parameters are (per stage): central frequency≈11 GHz, bandwidth≈400 MHz, noise temperature≈10 K, gain≈10 dB and input saturation≈1000 K GHz.
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