Abstract
Concerning diamond-based electronic devices, the H-terminated diamond surface is one of the most used terminations as it can be obtained directly by using H2 plasma, which also is a key step for diamond growth by chemical vapour deposition (CVD). The resultant surfaces present a p-type surface conductive layer with interest in power electronic applications. However, the mechanism for this behavior is still under discussion. Upward band bending due to surface transfer doping is the most accepted model, but has not been experimentally probed as of yet. Recently, a downward band bending very near the surface due to shallow acceptors has been proposed to coexist with surface transfer doping, explaining most of the observed phenomena. In this work, a new approach to the measurement of band bending by angle-resolved X-ray photoelectron spectroscopy (ARXPS) is proposed. Based on this new interpretation, a downward band bending of 0.67 eV extended over 0.5 nm was evidenced on a (100) H-terminated diamond surface.
Highlights
Diamond exhibits very interesting bulk properties such as a wide band-gap of 5.5 eV, a high thermal conductivity >20 W/cm, and a high breakdown field of 10 MV/cm [1,2], which makes it proper for high power and high-frequency electronic applications
To describe the X-ray photoelectron spectroscopy (XPS) contribution of electrons escaping from a fixed energy level, the Voigt distribution the Lorentzian component is related to the lifetime broadening of electrons [31]
A new method to characterize the band bending by angle-resolved X-ray photoelectron spectroscopy (ARXPS) was proposed and used
Summary
Diamond exhibits very interesting bulk properties such as a wide band-gap of 5.5 eV, a high thermal conductivity >20 W/cm, and a high breakdown field of 10 MV/cm [1,2], which makes it proper for high power and high-frequency electronic applications. Unipolar electronic devices such as diodes or transistors are awakening a great interest, but its electronic performance has been demonstrated to be very sensitive to surface terminations. The reasons for such phenomena are that terminations affect the diamond surface band bending
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