Abstract

ABSTRACTTrimethylgallium (TMGa), Triethylgallium (TEGa) and Diethylgalliumchloride (DEGaCl) are used in combination with arsine (AsH3) in atomic layer epitaxy of GaAs. We simulated this process in a UHV system by dosing a c(2×8) or (1×6) reconstructed GaAs(001) surface with arsine and organometallics at different temperatures. After the surface reconstruction was verfied by LEED, the sample was transferred in situ to the HREELS (high resolution electron energy loss spectroscopy) chamber. We present new studies on the adsorption and pyrolysis of organometallics on GaAs(001) surfaces.As a result we find that TMGa adsorbs molecularly on an As-rich cooled surface but decomposes upon adsorption on a Ga-stabilized (1×6) surface. These two adsorption states are identified by the geometrical position of the Gamethyl compound on the surface (Ga-C bond parallel or normal to the surface). The removal of the adsorbed species occurs on an As-rich surface at temperatures higher than 450°C and on the Ga-stabilized surface at 350°C.For TEGa and DEGaCl we found similar results.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.