Abstract
Both radiative and nonradiative processes which occur in the active region of GaInAs–GaInAsP–InP asymmetric multiple quantum-well (AMQW) heterolasers with two quantum wells of different width (4 and 9nm) are described. Several possible processes of non-radiative Auger recombination which affect the temperature sensitivity of the lasing threshold are analyzed and the temperature dependencies of the investigated processes are presented. For the above-mentioned AMQW heterostructure, it is shown that the influence of the Auger recombination processes on the temperature behaviour of the lasing threshold can be restrained by operation at temperatures lower than 340K and the cavity losses which do not exceed 60cm−1.
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