Abstract
Extreme ultraviolet (EUV) lithography is almost ready for realize 7 nm generation manufacturing and beyond. A key factor for the realization of EUV lithography is the choice of EUV resist material that is capable of resolving below 15-nm half pitch with high sensitivity. However, the performance of EUV resist is still not enough for the true HVM requirements, even by using the qualified EUV resist materials. One critical issue is ‘Chemical stochastic’, which will be become ‘defectivity’. We report herein how to improve `chemical stochastic’ in EUV lithography.
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