How to Grow Fully (100) Oriented SiC/Si/SiC/Si Multi‐Stack

Abstract

This paper reports on the successful elaboration of fully (100) oriented SiC/Si/SiC/Si multi‐stack using chemical vapor deposition. Si(100) heteroepitaxy on 3C‐SiC(100) is identified as the critical step which is solved by pulse insertion of precursors during cooling. It lead to the roughening of the 3C‐SiC surface which in turn lead to the quasi‐exclusive nucleation of (100) oriented islands at the expanse of (110) ones. Subsequent Si epitaxy on such modified surface allows growing fully (100) oriented Si layer, as confirmed by structural characterization of the layers. The 3C‐SiC grown on top of such Si(100) layer is again of (100) orientation, forming thus a fully (100) oriented stack. Due to the high lattice mismatch, each interface of the stack is characterized by a high density of crystalline defects which are shown to recombine along with thickness. Antiphase domains present inside the 3C‐SiC seed are shown to have no detrimental influence on the Si layer quality. Without the surface modification step, the Si layers grown on 3C‐SiC are always polycrystalline with a mixture of (110) and (100) orientations.