Abstract
The effect of a SiO(2) nanolayer and annealing temperature on the UV/visible room-temperature photoluminescence (PL) from SiN(x) films synthesized by rf magnetron sputtering is studied. The PL intensity can be maximized when the SiO(2) layer is 5-10 nm thick at 800 degrees C annealing temperature and only 2 nm at 1000 degrees C. A composition-structure-property analysis reveals that the PL intensity is directly related to both the surface chemical states and the content of the Si-0 and Si-N bonds in the SiN(x), films. These results are relevant for the development of advanced optoelectronic and photonic emitters and sensors. (C) 2010 Elsevier B.V. All rights reserved.
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