Abstract
The effect of the film thickness and postannealing temperature on visible photoluminescence (PL) from SiNx films synthesized by plasma-assisted radio frequency magnetron sputtering on SiO2 buffer layers is investigated. It is shown that strong visible PL is achieved at annealing temperatures above 650°C. The optimum annealing temperature for the maximum PL yield strongly depends on the film thickness and varies from 800to1200°C. A comparative composition-structure-property analysis reveals that the PL intensity is directly related to the content of the Si–O and Si–N bonds in the SiNx films. Therefore, sufficient oxidation and moderate nitridation of SiNx∕SiO2 films during the plasma-based growth process are crucial for a strong PL yield. Excessively high annealing temperatures lead to weakened Si–N bonds in thinner SiNx films, which eventually results in a lower PL intensity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
