Abstract
Low-temperature precipitation of neutral interstitial iron in n-type silicon is investigated by means of photocapacitance measurements. Isothermal kinetics as well as iron depth profiles are observed which agree very well with an outdiffusion mechanism of iron to the sample surface. From these data the diffusion coefficient of neutral iron in silicon could be determined. Comparison with published results on positively charged iron in p-type silicon reveals a higher stability of neutral iron as well as a charge state dependence of its diffusion mechanism.
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