Abstract
Gallium nitride (GaN) films were grown on (100) GaAs substrates by hot-mesh chemical vapor deposition (CVD). A nitrided layer was also formed by the NH x radicals generated on a tungsten hot mesh surface. Nitridation conditions for the growth of GaN films with a cubic-type structure were investigated. Compared with the GaN films grown by hot-filament CVD, the GaN films grown by hot-mesh CVD on the GaAs surface layer nitrided at a substrate temperature of 550 °C, a mesh temperature of 1200 °C and an ammonia (NH 3) pressure of 130 Pa have a more predominant cubic phase.
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